Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
100 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
44.4 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.5mm
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Stock information temporarily unavailable.
Please check again later.
₪ 15.676
Each (Supplied on a Reel) (ex VAT)
₪ 18.341
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
5
₪ 15.676
Each (Supplied on a Reel) (ex VAT)
₪ 18.341
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
5
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
5 - 20 | ₪ 15.676 | ₪ 78.38 |
25 - 120 | ₪ 9.733 | ₪ 48.66 |
125 - 620 | ₪ 9.677 | ₪ 48.38 |
625 - 1245 | ₪ 8.586 | ₪ 42.93 |
1250+ | ₪ 8.306 | ₪ 41.53 |
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
100 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
44.4 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.5mm
Product details