Vishay N-Channel MOSFET, 13.6 A, 30 V, 8-Pin SOIC SI4162DY-T1-GE3

RS Stock No.: 710-3323Brand: VishayManufacturers Part No.: SI4162DY-T1-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

13.6 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

20 nC @ 10 V, 8.8 nC @ 4.5 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

₪ 18.22

₪ 3.645 Each (In a Pack of 5) (ex VAT)

₪ 21.32

₪ 4.265 Each (In a Pack of 5) (inc. VAT)

Vishay N-Channel MOSFET, 13.6 A, 30 V, 8-Pin SOIC SI4162DY-T1-GE3
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5₪ 18.22
10₪ 36.45
15₪ 54.68
20₪ 72.90
25₪ 91.12
30₪ 109.35
35₪ 127.58
40₪ 145.80
45₪ 164.02
50₪ 182.25
55₪ 200.48
60₪ 218.70
65₪ 236.92
70₪ 255.15
75₪ 273.38

₪ 18.22

₪ 3.645 Each (In a Pack of 5) (ex VAT)

₪ 21.32

₪ 4.265 Each (In a Pack of 5) (inc. VAT)

Vishay N-Channel MOSFET, 13.6 A, 30 V, 8-Pin SOIC SI4162DY-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5₪ 18.22
10₪ 36.45
15₪ 54.68
20₪ 72.90
25₪ 91.12
30₪ 109.35
35₪ 127.58
40₪ 145.80
45₪ 164.02
50₪ 182.25
55₪ 200.48
60₪ 218.70
65₪ 236.92
70₪ 255.15
75₪ 273.38

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

13.6 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

20 nC @ 10 V, 8.8 nC @ 4.5 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more