Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.4 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
38 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.41mm
Width
4.7mm
Minimum Operating Temperature
-55 °C
Height
9.01mm
Product details
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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₪ 21.61
Each (Supplied as a Tape) (ex VAT)
₪ 25.28
Each (Supplied as a Tape) (inc. VAT)
Production pack (Tape)
1
₪ 21.61
Each (Supplied as a Tape) (ex VAT)
₪ 25.28
Each (Supplied as a Tape) (inc. VAT)
Production pack (Tape)
1
Buy in bulk
quantity | Unit price |
---|---|
1 - 24 | ₪ 21.61 |
25 - 99 | ₪ 8.99 |
100 - 249 | ₪ 7.91 |
250 - 499 | ₪ 7.47 |
500+ | ₪ 6.99 |
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.4 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
38 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.41mm
Width
4.7mm
Minimum Operating Temperature
-55 °C
Height
9.01mm
Product details