P-Channel MOSFET, 100 A, 30 V, 3-Pin DPAK Vishay Siliconix SQD40031EL_GE3

RS Stock No.: 178-3950Brand: Vishay SiliconixManufacturers Part No.: SQD40031EL_GE3
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Technical documents

Specifications

Channel Type

P

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

186 nC @ 10 V

Width

2.38mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

6.22mm

Country of Origin

Taiwan, Province Of China

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₪ 92.85

₪ 9.285 Each (In a Pack of 10) (ex VAT)

₪ 108.63

₪ 10.863 Each (In a Pack of 10) (inc. VAT)

P-Channel MOSFET, 100 A, 30 V, 3-Pin DPAK Vishay Siliconix SQD40031EL_GE3
Select packaging type

₪ 92.85

₪ 9.285 Each (In a Pack of 10) (ex VAT)

₪ 108.63

₪ 10.863 Each (In a Pack of 10) (inc. VAT)

P-Channel MOSFET, 100 A, 30 V, 3-Pin DPAK Vishay Siliconix SQD40031EL_GE3
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
10 - 90₪ 9.285₪ 92.85
100 - 490₪ 8.055₪ 80.55
500 - 990₪ 7.245₪ 72.45
1000+₪ 6.42₪ 64.20

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Technical documents

Specifications

Channel Type

P

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

186 nC @ 10 V

Width

2.38mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

6.22mm

Country of Origin

Taiwan, Province Of China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more