N-Channel MOSFET, 8 A, 600 V, 3-Pin DPAK Toshiba TK8P60W5,RVQ(S

RS Stock No.: 133-2804Brand: ToshibaManufacturers Part No.: TK8P60W5,RVQ(S
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

600 V

Package Type

DPAK (TO-252)

Series

DTMOSIV

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

560 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

80 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Width

6.1mm

Number of Elements per Chip

1

Height

2.3mm

Forward Diode Voltage

1.7V

Country of Origin

Japan

Product details

MOSFET N-channel, TK8 & TK9 Series, Toshiba

MOSFET Transistors, Toshiba

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₪ 92.85

₪ 9.285 Each (In a Pack of 10) (ex VAT)

₪ 108.63

₪ 10.863 Each (In a Pack of 10) (inc. VAT)

N-Channel MOSFET, 8 A, 600 V, 3-Pin DPAK Toshiba TK8P60W5,RVQ(S

10

Available in multiples of 10
10₪ 92.85
20₪ 185.70
30₪ 278.55
40₪ 371.40
50₪ 425.25
60₪ 510.30
70₪ 595.35
80₪ 680.40
90₪ 765.45
100₪ 816.00
110₪ 897.60
120₪ 979.20
130₪ 1,060.80
140₪ 1,142.40
150₪ 1,224.00

₪ 92.85

₪ 9.285 Each (In a Pack of 10) (ex VAT)

₪ 108.63

₪ 10.863 Each (In a Pack of 10) (inc. VAT)

N-Channel MOSFET, 8 A, 600 V, 3-Pin DPAK Toshiba TK8P60W5,RVQ(S
Stock information temporarily unavailable.

10

Available in multiples of 10
10₪ 92.85
20₪ 185.70
30₪ 278.55
40₪ 371.40
50₪ 425.25
60₪ 510.30
70₪ 595.35
80₪ 680.40
90₪ 765.45
100₪ 816.00
110₪ 897.60
120₪ 979.20
130₪ 1,060.80
140₪ 1,142.40
150₪ 1,224.00

Buy in bulk

quantityUnit pricePer Pack
10 - 40₪ 9.285₪ 92.85
50 - 90₪ 8.505₪ 85.05
100 - 490₪ 8.16₪ 81.60
500 - 990₪ 7.965₪ 79.65
1000+₪ 7.89₪ 78.90

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

600 V

Package Type

DPAK (TO-252)

Series

DTMOSIV

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

560 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

80 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Width

6.1mm

Number of Elements per Chip

1

Height

2.3mm

Forward Diode Voltage

1.7V

Country of Origin

Japan

Product details

MOSFET N-channel, TK8 & TK9 Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more