Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
2.9 A
Maximum Drain Source Voltage
12 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
1.04mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
2 nC @ 0 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
0.64mm
Height
0.35mm
Series
FemtoFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Country of Origin
Philippines
Product details
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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₪ 1.384
Each (On a Reel of 250) (ex VAT)
₪ 1.619
Each (On a Reel of 250) (inc VAT)
250
₪ 1.384
Each (On a Reel of 250) (ex VAT)
₪ 1.619
Each (On a Reel of 250) (inc VAT)
250
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
250 - 1000 | ₪ 1.384 | ₪ 346.10 |
1250+ | ₪ 0.965 | ₪ 241.22 |
Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
2.9 A
Maximum Drain Source Voltage
12 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
1.04mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
2 nC @ 0 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
0.64mm
Height
0.35mm
Series
FemtoFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Country of Origin
Philippines
Product details