Technical documents
Specifications
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
30 mA
Maximum Drain Source Voltage
600 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
800 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1.18 nC @ 5 V
Width
1.6mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Height
1.1mm
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₪ 1.51
Each (On a Reel of 3000) (ex VAT)
₪ 1.767
Each (On a Reel of 3000) (inc VAT)
3000
₪ 1.51
Each (On a Reel of 3000) (ex VAT)
₪ 1.767
Each (On a Reel of 3000) (inc VAT)
3000
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
3000 - 3000 | ₪ 1.51 | ₪ 4,530.82 |
6000 - 6000 | ₪ 1.426 | ₪ 4,279.10 |
9000 - 9000 | ₪ 1.342 | ₪ 4,027.39 |
12000+ | ₪ 1.259 | ₪ 3,775.68 |
Technical documents
Specifications
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
30 mA
Maximum Drain Source Voltage
600 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
800 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1.18 nC @ 5 V
Width
1.6mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Height
1.1mm