Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
25 V
Package Type
DPAK (TO-252)
Series
STripFET V
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
13.4 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.6mm
Width
6.2mm
Transistor Material
Si
Height
2.4mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™ V, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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₪ 64.95
₪ 12.99 Each (In a Pack of 5) (ex VAT)
₪ 75.99
₪ 15.198 Each (In a Pack of 5) (inc. VAT)
Standard
5
₪ 64.95
₪ 12.99 Each (In a Pack of 5) (ex VAT)
₪ 75.99
₪ 15.198 Each (In a Pack of 5) (inc. VAT)
Standard
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 245 | ₪ 12.99 | ₪ 64.95 |
250 - 495 | ₪ 8.91 | ₪ 44.55 |
500 - 620 | ₪ 7.875 | ₪ 39.38 |
625 - 1245 | ₪ 7.59 | ₪ 37.95 |
1250+ | ₪ 6.765 | ₪ 33.82 |
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
25 V
Package Type
DPAK (TO-252)
Series
STripFET V
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
13.4 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.6mm
Width
6.2mm
Transistor Material
Si
Height
2.4mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™ V, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.