Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Series
STripFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.6mm
Typical Gate Charge @ Vgs
46.5 nC @ 10 V
Width
6.2mm
Number of Elements per Chip
1
Height
2.4mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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₪ 18,750.00
₪ 7.50 Each (On a Reel of 2500) (ex VAT)
₪ 21,937.50
₪ 8.775 Each (On a Reel of 2500) (inc. VAT)
2500
₪ 18,750.00
₪ 7.50 Each (On a Reel of 2500) (ex VAT)
₪ 21,937.50
₪ 8.775 Each (On a Reel of 2500) (inc. VAT)
2500
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
2500 - 2500 | ₪ 7.50 | ₪ 18,750.00 |
5000 - 10000 | ₪ 7.005 | ₪ 17,512.50 |
12500 - 22500 | ₪ 6.555 | ₪ 16,387.50 |
25000 - 60000 | ₪ 6.12 | ₪ 15,300.00 |
62500+ | ₪ 5.73 | ₪ 14,325.00 |
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Series
STripFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.6mm
Typical Gate Charge @ Vgs
46.5 nC @ 10 V
Width
6.2mm
Number of Elements per Chip
1
Height
2.4mm
Minimum Operating Temperature
-55 °C
Product details