Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
49 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Series
NVD5C668NL
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
44 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
18.7 nC @ 10 V
Height
2.38mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Please check again later.
₪ 4.503
Each (On a Reel of 2500) (ex VAT)
₪ 5.268
Each (On a Reel of 2500) (inc VAT)
2500
₪ 4.503
Each (On a Reel of 2500) (ex VAT)
₪ 5.268
Each (On a Reel of 2500) (inc VAT)
2500
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
2500 - 2500 | ₪ 4.503 | ₪ 11,257.12 |
5000 - 5000 | ₪ 4.377 | ₪ 10,942.48 |
7500+ | ₪ 4.321 | ₪ 10,802.64 |
Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
49 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Series
NVD5C668NL
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
44 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
18.7 nC @ 10 V
Height
2.38mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Product details