Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.9mm
Maximum Operating Temperature
+150 °C
Length
10.63mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Number of Elements per Chip
1
Height
16.12mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Country of Origin
China
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₪ 36.778
Each (In a Tube of 50) (ex VAT)
₪ 43.03
Each (In a Tube of 50) (inc VAT)
50
₪ 36.778
Each (In a Tube of 50) (ex VAT)
₪ 43.03
Each (In a Tube of 50) (inc VAT)
50
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
50 - 450 | ₪ 36.778 | ₪ 1,838.90 |
500+ | ₪ 34.554 | ₪ 1,727.72 |
Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.9mm
Maximum Operating Temperature
+150 °C
Length
10.63mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Number of Elements per Chip
1
Height
16.12mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Country of Origin
China