Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
128 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
37.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.36mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
16.07mm
Country of Origin
China
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₪ 48.706
Each (In a Pack of 2) (ex VAT)
₪ 56.986
Each (In a Pack of 2) (inc VAT)
2
₪ 48.706
Each (In a Pack of 2) (ex VAT)
₪ 56.986
Each (In a Pack of 2) (inc VAT)
2
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
2 - 8 | ₪ 48.706 | ₪ 97.41 |
10 - 98 | ₪ 42.553 | ₪ 85.11 |
100 - 248 | ₪ 37.114 | ₪ 74.23 |
250 - 498 | ₪ 34.289 | ₪ 68.58 |
500+ | ₪ 31.87 | ₪ 63.74 |
Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
128 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
37.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.36mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
16.07mm
Country of Origin
China