Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
144 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Height
16.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China
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₪ 10.376
Each (In a Tube of 800) (ex VAT)
₪ 12.14
Each (In a Tube of 800) (inc VAT)
800
₪ 10.376
Each (In a Tube of 800) (ex VAT)
₪ 12.14
Each (In a Tube of 800) (inc VAT)
800
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
800 - 800 | ₪ 10.376 | ₪ 8,300.90 |
1600+ | ₪ 8.754 | ₪ 7,003.19 |
Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
144 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Height
16.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China