Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Height
1.01mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET with Schottky Diode, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Please check again later.
₪ 0.713
Each (Supplied on a Reel) (ex VAT)
₪ 0.834
Each (Supplied on a Reel) (inc VAT)
200
₪ 0.713
Each (Supplied on a Reel) (ex VAT)
₪ 0.834
Each (Supplied on a Reel) (inc VAT)
200
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
200 - 200 | ₪ 0.713 | ₪ 142.64 |
400 - 600 | ₪ 0.671 | ₪ 134.25 |
800 - 1400 | ₪ 0.615 | ₪ 123.06 |
1600 - 2200 | ₪ 0.531 | ₪ 106.28 |
2400+ | ₪ 0.475 | ₪ 95.09 |
Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Height
1.01mm
Minimum Operating Temperature
-55 °C
Product details