Technical documents
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
211 A
Maximum Drain Source Voltage
30 V
Package Type
PQFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.09 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±16 V
Width
5.85mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
102 nC @ 10 V
Height
1.05mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Product details
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Please check again later.
₪ 14.04
Each (In a Pack of 10) (ex VAT)
₪ 16.427
Each (In a Pack of 10) (inc VAT)
10
₪ 14.04
Each (In a Pack of 10) (ex VAT)
₪ 16.427
Each (In a Pack of 10) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | ₪ 14.04 | ₪ 140.40 |
100 - 490 | ₪ 11.495 | ₪ 114.95 |
500 - 990 | ₪ 9.132 | ₪ 91.32 |
1000 - 1490 | ₪ 7.719 | ₪ 77.19 |
1500+ | ₪ 7.453 | ₪ 74.53 |
Technical documents
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
211 A
Maximum Drain Source Voltage
30 V
Package Type
PQFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.09 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±16 V
Width
5.85mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
102 nC @ 10 V
Height
1.05mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Product details