N-Channel MOSFET, 7.3 A, 650 V, 3-Pin DPAK Infineon SPD07N60C3BTMA1
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
7.3 A
Maximum Drain Source Voltage
650 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
21 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
6.73mm
Number of Elements per Chip
1
Width
6.22mm
Transistor Material
Si
Series
CoolMOS C3
Minimum Operating Temperature
-55 °C
Height
2.41mm
Product details
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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₪ 10.796
Each (Supplied on a Reel) (ex VAT)
₪ 12.631
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
2
₪ 10.796
Each (Supplied on a Reel) (ex VAT)
₪ 12.631
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
2
Buy in bulk
| quantity | Unit price | Per Reel |
|---|---|---|
| 2 - 24 | ₪ 10.796 | ₪ 21.59 |
| 26 - 124 | ₪ 10.082 | ₪ 20.16 |
| 126 - 624 | ₪ 9.971 | ₪ 19.94 |
| 626 - 1248 | ₪ 9.831 | ₪ 19.66 |
| 1250+ | ₪ 9.691 | ₪ 19.38 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
7.3 A
Maximum Drain Source Voltage
650 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
21 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
6.73mm
Number of Elements per Chip
1
Width
6.22mm
Transistor Material
Si
Series
CoolMOS C3
Minimum Operating Temperature
-55 °C
Height
2.41mm
Product details
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products