N-Channel MOSFET, 21 A, 650 V, 3-Pin D2PAK Infineon SPB20N60C3ATMA1
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
650 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
208 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.31mm
Typical Gate Charge @ Vgs
87 nC @ 10 V
Width
11.05mm
Transistor Material
Si
Series
CoolMOS C3
Height
4.57mm
Minimum Operating Temperature
-55 °C
Product details
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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₪ 32.806
Each (Supplied on a Reel) (ex VAT)
₪ 38.383
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
10
₪ 32.806
Each (Supplied on a Reel) (ex VAT)
₪ 38.383
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
10
Buy in bulk
| quantity | Unit price | Per Reel |
|---|---|---|
| 10 - 48 | ₪ 32.806 | ₪ 65.61 |
| 50 - 98 | ₪ 31.618 | ₪ 63.24 |
| 100 - 248 | ₪ 29.213 | ₪ 58.43 |
| 250+ | ₪ 28.22 | ₪ 56.44 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
650 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
208 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.31mm
Typical Gate Charge @ Vgs
87 nC @ 10 V
Width
11.05mm
Transistor Material
Si
Series
CoolMOS C3
Height
4.57mm
Minimum Operating Temperature
-55 °C
Product details
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products