Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
176 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™ 5
Package Type
TO 263
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
11.05mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.31mm
Typical Gate Charge @ Vgs
168 nC @ 10 V
Height
4.57mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
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₪ 47.322
Each (In a Pack of 5) (ex VAT)
₪ 55.367
Each (In a Pack of 5) (inc. VAT)
Standard
5
₪ 47.322
Each (In a Pack of 5) (ex VAT)
₪ 55.367
Each (In a Pack of 5) (inc. VAT)
Standard
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | ₪ 47.322 | ₪ 236.61 |
25 - 95 | ₪ 40.861 | ₪ 204.31 |
100 - 245 | ₪ 35.897 | ₪ 179.48 |
250 - 495 | ₪ 34.554 | ₪ 172.77 |
500+ | ₪ 31.45 | ₪ 157.25 |
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
176 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™ 5
Package Type
TO 263
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
11.05mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.31mm
Typical Gate Charge @ Vgs
168 nC @ 10 V
Height
4.57mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V