N-Channel MOSFET, 10.3 A, 600 V, 3-Pin TO-220 FP Infineon IPAW60R600CEXKSA1
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10.3 A
Maximum Drain Source Voltage
600 V
Series
CoolMOS™ CE
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
11.3mm
Typical Gate Charge @ Vgs
20.5 nC @ 10 V
Height
16.27mm
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
0.9V
Country of Origin
China
Product details
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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₪ 8.32
Each (In a Pack of 5) (ex VAT)
₪ 9.734
Each (In a Pack of 5) (inc. VAT)
Standard
5
₪ 8.32
Each (In a Pack of 5) (ex VAT)
₪ 9.734
Each (In a Pack of 5) (inc. VAT)
Standard
5
Buy in bulk
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 85 | ₪ 8.32 | ₪ 41.60 |
| 90 - 220 | ₪ 7.272 | ₪ 36.36 |
| 225+ | ₪ 5.733 | ₪ 28.67 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10.3 A
Maximum Drain Source Voltage
600 V
Series
CoolMOS™ CE
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
11.3mm
Typical Gate Charge @ Vgs
20.5 nC @ 10 V
Height
16.27mm
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
0.9V
Country of Origin
China
Product details
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products