Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
25 V
Series
OptiMOS
Package Type
TISON-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.003 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Number of Elements per Chip
2
Transistor Material
Si
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P.O.A.
Dual N-Channel MOSFET, 50 A, 25 V, 8-Pin TISON-8 Infineon BSG0811NDATMA1
5000
P.O.A.
Dual N-Channel MOSFET, 50 A, 25 V, 8-Pin TISON-8 Infineon BSG0811NDATMA1
Stock information temporarily unavailable.
5000
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
25 V
Series
OptiMOS
Package Type
TISON-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.003 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Number of Elements per Chip
2
Transistor Material
Si