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Vishay P-Channel MOSFET, 3.6 A, 200 V, 3-Pin DPAK IRFR9220TRPBF

RS Stock No.: 812-0654PBrand: VishayManufacturers Part No.: IRFR9220TRPBF
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Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

200 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Width

6.22mm

Length

6.73mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

2.38mm

Country of Origin

China

Product details

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

₪ 15.52

₪ 3.105 Each (Supplied on a Reel) (ex VAT)

₪ 18.16

₪ 3.633 Each (Supplied on a Reel) (inc. VAT)

Vishay P-Channel MOSFET, 3.6 A, 200 V, 3-Pin DPAK IRFR9220TRPBF
Select packaging type

₪ 15.52

₪ 3.105 Each (Supplied on a Reel) (ex VAT)

₪ 18.16

₪ 3.633 Each (Supplied on a Reel) (inc. VAT)

Vishay P-Channel MOSFET, 3.6 A, 200 V, 3-Pin DPAK IRFR9220TRPBF
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

200 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Width

6.22mm

Length

6.73mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

2.38mm

Country of Origin

China

Product details

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more