STMicroelectronics N-Channel MOSFET, 130 A, 710 V, 3-Pin Max247 STY139N65M5
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
710 V
Series
MDmesh M5
Package Type
Max247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
625 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.9mm
Typical Gate Charge @ Vgs
363 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.3mm
Country of Origin
China
Product details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
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₪ 2,543.25
₪ 254.32 Each (Supplied in a Tube) (ex VAT)
₪ 2,975.60
₪ 297.56 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
10
₪ 2,543.25
₪ 254.32 Each (Supplied in a Tube) (ex VAT)
₪ 2,975.60
₪ 297.56 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
10
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price |
|---|---|
| 10 - 49 | ₪ 254.32 |
| 50 - 149 | ₪ 246.72 |
| 150 - 499 | ₪ 223.98 |
| 500+ | ₪ 206.37 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
710 V
Series
MDmesh M5
Package Type
Max247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
625 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.9mm
Typical Gate Charge @ Vgs
363 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.3mm
Country of Origin
China
Product details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products