STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 40 A, 600 V, 4-Pin ISOTOP STE40NC60

RS Stock No.: 103-1568Brand: STMicroelectronicsManufacturers Part No.: STE40NC60
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Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

600 V

Series

MDmesh, SuperMESH

Package Type

ISOTOP

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

130 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

460 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

25.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

38.2mm

Typical Gate Charge @ Vgs

307.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

9.1mm

Minimum Operating Temperature

-65 °C

Product details

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

₪ 2,834.25

₪ 283.425 Each (In a Tube of 10) (ex VAT)

₪ 3,316.07

₪ 331.607 Each (In a Tube of 10) (inc. VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 40 A, 600 V, 4-Pin ISOTOP STE40NC60

10

Available in multiples of 10
10₪ 2,834.25
20₪ 5,668.50
30₪ 8,502.75
40₪ 11,337.00
50₪ 14,171.25
60₪ 17,005.50
70₪ 19,839.75
80₪ 22,674.00
90₪ 25,508.25
100₪ 28,342.50
110₪ 31,176.75
120₪ 34,011.00
130₪ 36,845.25
140₪ 39,679.50
150₪ 42,513.75

₪ 2,834.25

₪ 283.425 Each (In a Tube of 10) (ex VAT)

₪ 3,316.07

₪ 331.607 Each (In a Tube of 10) (inc. VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 40 A, 600 V, 4-Pin ISOTOP STE40NC60
Stock information temporarily unavailable.

10

Available in multiples of 10
10₪ 2,834.25
20₪ 5,668.50
30₪ 8,502.75
40₪ 11,337.00
50₪ 14,171.25
60₪ 17,005.50
70₪ 19,839.75
80₪ 22,674.00
90₪ 25,508.25
100₪ 28,342.50
110₪ 31,176.75
120₪ 34,011.00
130₪ 36,845.25
140₪ 39,679.50
150₪ 42,513.75

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

600 V

Series

MDmesh, SuperMESH

Package Type

ISOTOP

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

130 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

460 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

25.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

38.2mm

Typical Gate Charge @ Vgs

307.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

9.1mm

Minimum Operating Temperature

-65 °C

Product details

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more