Nexperia P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-23 BSS84,215

RS Stock No.: 436-8091Brand: NexperiaManufacturers Part No.: BSS84,215
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Technical documents

Specifications

Channel Type

P

Maximum Continuous Drain Current

130 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

250 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-65 °C

Height

1mm

Country of Origin

China

Product details

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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onsemi P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-23 BSS84
₪ 2.72Each (In a Pack of 10) (ex VAT)
Stock information temporarily unavailable.

₪ 23.25

₪ 2.325 Each (In a Pack of 10) (ex VAT)

₪ 27.20

₪ 2.72 Each (In a Pack of 10) (inc. VAT)

Nexperia P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-23 BSS84,215
Select packaging type

₪ 23.25

₪ 2.325 Each (In a Pack of 10) (ex VAT)

₪ 27.20

₪ 2.72 Each (In a Pack of 10) (inc. VAT)

Nexperia P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-23 BSS84,215
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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quantityUnit pricePer Pack
10 - 40₪ 2.325₪ 23.25
50 - 90₪ 1.425₪ 14.25
100 - 240₪ 0.945₪ 9.45
250 - 990₪ 0.855₪ 8.55
1000+₪ 0.75₪ 7.50

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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You may be interested in
onsemi P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-23 BSS84
₪ 2.72Each (In a Pack of 10) (ex VAT)

Technical documents

Specifications

Channel Type

P

Maximum Continuous Drain Current

130 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

250 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-65 °C

Height

1mm

Country of Origin

China

Product details

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
onsemi P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-23 BSS84
₪ 2.72Each (In a Pack of 10) (ex VAT)