IXYS Trench N-Channel MOSFET, 110 A, 250 V, 3-Pin TO-247 IXTH110N25T

RS Stock No.: 168-4583Brand: IXYSManufacturers Part No.: IXTH110N25T
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Technical documents

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

250 V

Series

Trench

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

694 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5.3mm

Length

16.26mm

Typical Gate Charge @ Vgs

157 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

21.46mm

Product details

N-Channel Trench-Gate Power MOSFET, IXYS

Trench Gate MOSFET Technology
Low on-state Resistance RDS(on)
Superior avalanche ruggedness

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Stock information temporarily unavailable.

₪ 1,583.10

₪ 52.77 Each (In a Tube of 30) (ex VAT)

₪ 1,852.23

₪ 61.741 Each (In a Tube of 30) (inc. VAT)

IXYS Trench N-Channel MOSFET, 110 A, 250 V, 3-Pin TO-247 IXTH110N25T

₪ 1,583.10

₪ 52.77 Each (In a Tube of 30) (ex VAT)

₪ 1,852.23

₪ 61.741 Each (In a Tube of 30) (inc. VAT)

IXYS Trench N-Channel MOSFET, 110 A, 250 V, 3-Pin TO-247 IXTH110N25T
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Tube
30 - 120₪ 52.77₪ 1,583.10
150 - 270₪ 48.225₪ 1,446.75
300+₪ 44.595₪ 1,337.85

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

250 V

Series

Trench

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

694 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5.3mm

Length

16.26mm

Typical Gate Charge @ Vgs

157 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

21.46mm

Product details

N-Channel Trench-Gate Power MOSFET, IXYS

Trench Gate MOSFET Technology
Low on-state Resistance RDS(on)
Superior avalanche ruggedness

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more