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Vishay N-Channel MOSFET, 16 A, 400 V, 3-Pin TO-247AC IRFP350LCPBF

RS Stock No.: 541-0165PBrand: VishayManufacturers Part No.: IRFP350LCPBF
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

400 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

76 nC @ 10 V

Width

5.31mm

Minimum Operating Temperature

-55 °C

Height

20.7mm

Product details

N-Channel MOSFET, 300V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

₪ 541.32

₪ 41.64 Each (Supplied in a Tube) (ex VAT)

₪ 633.34

₪ 48.72 Each (Supplied in a Tube) (inc. VAT)

Vishay N-Channel MOSFET, 16 A, 400 V, 3-Pin TO-247AC IRFP350LCPBF
Select packaging type

₪ 541.32

₪ 41.64 Each (Supplied in a Tube) (ex VAT)

₪ 633.34

₪ 48.72 Each (Supplied in a Tube) (inc. VAT)

Vishay N-Channel MOSFET, 16 A, 400 V, 3-Pin TO-247AC IRFP350LCPBF
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

400 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

76 nC @ 10 V

Width

5.31mm

Minimum Operating Temperature

-55 °C

Height

20.7mm

Product details

N-Channel MOSFET, 300V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more