Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Transistor
Maximum DC Collector Current Idc
3A
Maximum Collector Emitter Voltage Vceo
60V
Package Type
SOT-223
Mount Type
Surface
Transistor Configuration
NPN
Maximum Collector Base Voltage VCBO
80V
Maximum Power Dissipation Pd
1.6W
Transistor Polarity
NPN
Minimum DC Current Gain hFE
80
Maximum Emitter Base Voltage VEBO
6V
Minimum Operating Temperature
-60°C
Pin Count
4
Maximum Operating Temperature
150°C
Length
2.29mm
Height
4.4mm
Standards/Approvals
RoHS
Automotive Standard
No
Country of Origin
China
Product Details
The STMicroelectronics NPN transistor is manufactured using new low voltage Planar technology with double metal process. The result is a transistor which boasts exceptionally high gain performance coupled with very low saturation voltage.
Stock information temporarily unavailable.
P.O.A.
Each (On a Reel of 1000) (ex VAT)
1000
P.O.A.
Each (On a Reel of 1000) (ex VAT)
Stock information temporarily unavailable.
1000
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Transistor
Maximum DC Collector Current Idc
3A
Maximum Collector Emitter Voltage Vceo
60V
Package Type
SOT-223
Mount Type
Surface
Transistor Configuration
NPN
Maximum Collector Base Voltage VCBO
80V
Maximum Power Dissipation Pd
1.6W
Transistor Polarity
NPN
Minimum DC Current Gain hFE
80
Maximum Emitter Base Voltage VEBO
6V
Minimum Operating Temperature
-60°C
Pin Count
4
Maximum Operating Temperature
150°C
Length
2.29mm
Height
4.4mm
Standards/Approvals
RoHS
Automotive Standard
No
Country of Origin
China
Product Details
The STMicroelectronics NPN transistor is manufactured using new low voltage Planar technology with double metal process. The result is a transistor which boasts exceptionally high gain performance coupled with very low saturation voltage.