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IXYS Linear L2 N-Channel MOSFET, 178 A, 100 V, 4-Pin SOT-227 IXTN200N10L2

RS Stock No.: 168-4584Brand: IXYSManufacturers Part No.: IXTN200N10L2
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Technical documents

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

178 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-227

Series

Linear L2

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

11 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

830 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

25.07mm

Maximum Operating Temperature

+150 °C

Length

38.23mm

Typical Gate Charge @ Vgs

540 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

9.6mm

Country of Origin

Philippines

Product details

N-Channel Power MOSFET, IXYS Linear Series

N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Stock information temporarily unavailable.

₪ 3,367.20

₪ 336.72 Each (In a Tube of 10) (ex VAT)

₪ 3,939.62

₪ 393.962 Each (In a Tube of 10) (inc. VAT)

IXYS Linear L2 N-Channel MOSFET, 178 A, 100 V, 4-Pin SOT-227 IXTN200N10L2

₪ 3,367.20

₪ 336.72 Each (In a Tube of 10) (ex VAT)

₪ 3,939.62

₪ 393.962 Each (In a Tube of 10) (inc. VAT)

IXYS Linear L2 N-Channel MOSFET, 178 A, 100 V, 4-Pin SOT-227 IXTN200N10L2
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

178 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-227

Series

Linear L2

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

11 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

830 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

25.07mm

Maximum Operating Temperature

+150 °C

Length

38.23mm

Typical Gate Charge @ Vgs

540 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

9.6mm

Country of Origin

Philippines

Product details

N-Channel Power MOSFET, IXYS Linear Series

N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more