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Vishay P-Channel MOSFET, 2 A, 200 V, 3-Pin D2PAK SIHF9620S-GE3

RS Stock No.: 815-2660Brand: VishayManufacturers Part No.: SIHF9620S-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

200 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.67mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

9.65mm

Transistor Material

Si

Number of Elements per Chip

1

Height

4.83mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

₪ 117.45

₪ 11.745 Each (In a Pack of 10) (ex VAT)

₪ 137.42

₪ 13.742 Each (In a Pack of 10) (inc. VAT)

Vishay P-Channel MOSFET, 2 A, 200 V, 3-Pin D2PAK SIHF9620S-GE3
Select packaging type

₪ 117.45

₪ 11.745 Each (In a Pack of 10) (ex VAT)

₪ 137.42

₪ 13.742 Each (In a Pack of 10) (inc. VAT)

Vishay P-Channel MOSFET, 2 A, 200 V, 3-Pin D2PAK SIHF9620S-GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

200 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.67mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

9.65mm

Transistor Material

Si

Number of Elements per Chip

1

Height

4.83mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more