Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
52.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.15mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.15mm
Typical Gate Charge @ Vgs
47.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.07mm
Minimum Operating Temperature
-50 °C
Country of Origin
China
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₪ 1,669.50
₪ 5.565 Each (Supplied on a Reel) (ex VAT)
₪ 1,953.32
₪ 6.511 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
300
₪ 1,669.50
₪ 5.565 Each (Supplied on a Reel) (ex VAT)
₪ 1,953.32
₪ 6.511 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
300
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Reel |
---|---|---|
300 - 580 | ₪ 5.565 | ₪ 111.30 |
600 - 1480 | ₪ 4.845 | ₪ 96.90 |
1500 - 2980 | ₪ 4.17 | ₪ 83.40 |
3000+ | ₪ 4.155 | ₪ 83.10 |
Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
52.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.15mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.15mm
Typical Gate Charge @ Vgs
47.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.07mm
Minimum Operating Temperature
-50 °C
Country of Origin
China
Product details