Technical documents
Specifications
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
400 mA, 700 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.48 Ω, 578 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
340 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
2
Length
2.2mm
Typical Gate Charge @ Vgs
1.2 nC @ 10 V, 1.9 nC @ 10 V
Width
1.35mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Product details
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₪ 643.50
₪ 2.145 Each (Supplied on a Reel) (ex VAT)
₪ 752.90
₪ 2.51 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
300
₪ 643.50
₪ 2.145 Each (Supplied on a Reel) (ex VAT)
₪ 752.90
₪ 2.51 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
300
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Reel |
---|---|---|
300 - 580 | ₪ 2.145 | ₪ 42.90 |
600 - 1480 | ₪ 1.77 | ₪ 35.40 |
1500 - 2980 | ₪ 1.335 | ₪ 26.70 |
3000+ | ₪ 1.23 | ₪ 24.60 |
Technical documents
Specifications
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
400 mA, 700 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.48 Ω, 578 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
340 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
2
Length
2.2mm
Typical Gate Charge @ Vgs
1.2 nC @ 10 V, 1.9 nC @ 10 V
Width
1.35mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Product details