Toshiba TK N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 TK31E60W,S1VX(S

RS Stock No.: 168-7968Brand: ToshibaManufacturers Part No.: TK31E60W,S1VX(S
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

230 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

10.16mm

Typical Gate Charge @ Vgs

86 nC @ 10 V

Number of Elements per Chip

1

Width

4.45mm

Height

15.1mm

Country of Origin

China

Product details

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

₪ 1,437.00

₪ 28.74 Each (In a Tube of 50) (ex VAT)

₪ 1,681.29

₪ 33.626 Each (In a Tube of 50) (inc. VAT)

Toshiba TK N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 TK31E60W,S1VX(S

50

Available in multiples of 50
50₪ 1,437.00
100₪ 2,874.00
150₪ 4,311.00
200₪ 5,748.00
250₪ 6,566.25
300₪ 7,879.50
350₪ 9,192.75
400₪ 10,506.00
450₪ 11,819.25
500₪ 12,142.50
550₪ 13,356.75
600₪ 14,571.00
650₪ 15,785.25
700₪ 16,999.50
750₪ 18,213.75

₪ 1,437.00

₪ 28.74 Each (In a Tube of 50) (ex VAT)

₪ 1,681.29

₪ 33.626 Each (In a Tube of 50) (inc. VAT)

Toshiba TK N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 TK31E60W,S1VX(S
Stock information temporarily unavailable.

50

Available in multiples of 50
50₪ 1,437.00
100₪ 2,874.00
150₪ 4,311.00
200₪ 5,748.00
250₪ 6,566.25
300₪ 7,879.50
350₪ 9,192.75
400₪ 10,506.00
450₪ 11,819.25
500₪ 12,142.50
550₪ 13,356.75
600₪ 14,571.00
650₪ 15,785.25
700₪ 16,999.50
750₪ 18,213.75

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Tube
50 - 200₪ 28.74₪ 1,437.00
250 - 450₪ 26.265₪ 1,313.25
500+₪ 24.285₪ 1,214.25

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

230 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

10.16mm

Typical Gate Charge @ Vgs

86 nC @ 10 V

Number of Elements per Chip

1

Width

4.45mm

Height

15.1mm

Country of Origin

China

Product details

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more