STMicroelectronics N-Channel MOSFET, 13 A, 600 V, 3-Pin TO-220FP STP13NK60ZFP
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
66 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
16.4mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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₪ 183.82
₪ 36.765 Each (In a Pack of 5) (ex VAT)
₪ 215.07
₪ 43.015 Each (In a Pack of 5) (inc. VAT)
Standard
5
₪ 183.82
₪ 36.765 Each (In a Pack of 5) (ex VAT)
₪ 215.07
₪ 43.015 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 5 | ₪ 36.765 | ₪ 183.82 |
| 10 - 45 | ₪ 29.445 | ₪ 147.22 |
| 50 - 95 | ₪ 27.975 | ₪ 139.88 |
| 100 - 245 | ₪ 26.43 | ₪ 132.15 |
| 250+ | ₪ 25.515 | ₪ 127.58 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
66 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
16.4mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products