ROHM RZM002P02 P-Channel MOSFET, 200 mA, 20 V, 3-Pin SOT-723 RZM002P02T2L
Technical documents
Specifications
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
20 V
Series
RZM002P02
Package Type
SOT-723
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
150 mW
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Width
0.9mm
Length
1.3mm
Typical Gate Charge @ Vgs
1.4 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
0.45mm
Product details
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
₪ 163.12
₪ 2.175 Each (In a Pack of 75) (ex VAT)
₪ 190.85
₪ 2.545 Each (In a Pack of 75) (inc. VAT)
75
₪ 163.12
₪ 2.175 Each (In a Pack of 75) (ex VAT)
₪ 190.85
₪ 2.545 Each (In a Pack of 75) (inc. VAT)
75
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Pack |
|---|---|---|
| 75 - 300 | ₪ 2.175 | ₪ 163.12 |
| 375 - 675 | ₪ 1.065 | ₪ 79.88 |
| 750 - 1800 | ₪ 0.915 | ₪ 68.62 |
| 1875 - 3675 | ₪ 0.66 | ₪ 49.50 |
| 3750+ | ₪ 0.60 | ₪ 45.00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
20 V
Series
RZM002P02
Package Type
SOT-723
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
150 mW
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Width
0.9mm
Length
1.3mm
Typical Gate Charge @ Vgs
1.4 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
0.45mm
Product details
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products