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Diodes Inc N-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 ZXMN2F34FHTA

RS Stock No.: 122-0604Brand: DiodesZetexManufacturers Part No.: ZXMN2F34FHTA
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

1.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

1

Width

1.4mm

Length

3.04mm

Typical Gate Charge @ Vgs

2.8 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.12mm

Country of Origin

Germany

Product details

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Stock information temporarily unavailable.

₪ 2,520.00

₪ 0.84 Each (On a Reel of 3000) (ex VAT)

₪ 2,948.40

₪ 0.983 Each (On a Reel of 3000) (inc. VAT)

Diodes Inc N-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 ZXMN2F34FHTA

₪ 2,520.00

₪ 0.84 Each (On a Reel of 3000) (ex VAT)

₪ 2,948.40

₪ 0.983 Each (On a Reel of 3000) (inc. VAT)

Diodes Inc N-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 ZXMN2F34FHTA
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

1.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

1

Width

1.4mm

Length

3.04mm

Typical Gate Charge @ Vgs

2.8 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.12mm

Country of Origin

Germany

Product details

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more