Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.3mm
Typical Gate Charge @ Vgs
92 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.78mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₪ 717.60
₪ 4.485 Each (Supplied on a Reel) (ex VAT)
₪ 839.59
₪ 5.247 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
160
₪ 717.60
₪ 4.485 Each (Supplied on a Reel) (ex VAT)
₪ 839.59
₪ 5.247 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
160
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Reel |
---|---|---|
160 - 740 | ₪ 4.485 | ₪ 89.70 |
760 - 1480 | ₪ 3.765 | ₪ 75.30 |
1500+ | ₪ 3.33 | ₪ 66.60 |
Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.3mm
Typical Gate Charge @ Vgs
92 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.78mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details