Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.8 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.55mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₪ 165.30
₪ 8.265 Each (In a Pack of 20) (ex VAT)
₪ 193.40
₪ 9.67 Each (In a Pack of 20) (inc. VAT)
Standard
20
₪ 165.30
₪ 8.265 Each (In a Pack of 20) (ex VAT)
₪ 193.40
₪ 9.67 Each (In a Pack of 20) (inc. VAT)
Stock information temporarily unavailable.
Standard
20
Stock information temporarily unavailable.
quantity | Unit price | Per Pack |
---|---|---|
20 - 80 | ₪ 8.265 | ₪ 165.30 |
100 - 480 | ₪ 6.00 | ₪ 120.00 |
500 - 1480 | ₪ 5.235 | ₪ 104.70 |
1500 - 2480 | ₪ 4.215 | ₪ 84.30 |
2500+ | ₪ 3.975 | ₪ 79.50 |
Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.8 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.55mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details