Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
60 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Width
5.31mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
20.82mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₪ 1,475.25
₪ 29.505 Each (Supplied in a Tube) (ex VAT)
₪ 1,726.04
₪ 34.521 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
50
₪ 1,475.25
₪ 29.505 Each (Supplied in a Tube) (ex VAT)
₪ 1,726.04
₪ 34.521 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
50
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
50 - 95 | ₪ 29.505 | ₪ 147.52 |
100 - 245 | ₪ 27.135 | ₪ 135.68 |
250 - 495 | ₪ 26.19 | ₪ 130.95 |
500+ | ₪ 22.74 | ₪ 113.70 |
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
60 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Width
5.31mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
20.82mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details