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Toshiba TK N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1

RS Stock No.: 796-5070Brand: ToshibaManufacturers Part No.: TK100E10N1
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

207 A

Maximum Drain Source Voltage

100 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.16mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15.1mm

Product details

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

₪ 37.58

₪ 37.58 Each (ex VAT)

₪ 43.97

₪ 43.97 Each (inc. VAT)

Toshiba TK N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1₪ 37.58
2₪ 75.15
3₪ 112.72
4₪ 150.30
5₪ 187.88
6₪ 225.45
7₪ 263.02
8₪ 300.60
9₪ 338.18
10₪ 375.75
11₪ 413.32
12₪ 450.90
13₪ 488.48
14₪ 526.05
15₪ 563.62

₪ 37.58

₪ 37.58 Each (ex VAT)

₪ 43.97

₪ 43.97 Each (inc. VAT)

Toshiba TK N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1₪ 37.58
2₪ 75.15
3₪ 112.72
4₪ 150.30
5₪ 187.88
6₪ 225.45
7₪ 263.02
8₪ 300.60
9₪ 338.18
10₪ 375.75
11₪ 413.32
12₪ 450.90
13₪ 488.48
14₪ 526.05
15₪ 563.62

Stock information temporarily unavailable.

Please check again later.

quantityUnit price
1 - 24₪ 37.58
25 - 99₪ 24.50
100 - 349₪ 24.16
350+₪ 24.14

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

207 A

Maximum Drain Source Voltage

100 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.16mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15.1mm

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more