Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
60 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.1mm
Typical Gate Charge @ Vgs
9.5 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.05mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
₪ 483.00
₪ 4.83 Each (Supplied on a Reel) (ex VAT)
₪ 565.11
₪ 5.651 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
₪ 483.00
₪ 4.83 Each (Supplied on a Reel) (ex VAT)
₪ 565.11
₪ 5.651 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Reel |
---|---|---|
100 - 380 | ₪ 4.83 | ₪ 96.60 |
400 - 980 | ₪ 4.17 | ₪ 83.40 |
1000 - 2980 | ₪ 3.48 | ₪ 69.60 |
3000+ | ₪ 3.225 | ₪ 64.50 |
Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
60 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.1mm
Typical Gate Charge @ Vgs
9.5 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.05mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details