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Microchip 2N7000 N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 2N7000-G

RS Stock No.: 177-9760Brand: MicrochipManufacturers Part No.: 2N7000-G
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

60 V

Series

2N7000

Package Type

TO-92

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

30 V

Width

4.06mm

Number of Elements per Chip

1

Length

5.08mm

Maximum Operating Temperature

+150 °C

Height

5.33mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.85V

Country of Origin

Taiwan, Province Of China

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Stock information temporarily unavailable.

₪ 69.38

₪ 2.775 Each (In a Pack of 25) (ex VAT)

₪ 81.17

₪ 3.247 Each (In a Pack of 25) (inc. VAT)

Microchip 2N7000 N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 2N7000-G
Select packaging type

₪ 69.38

₪ 2.775 Each (In a Pack of 25) (ex VAT)

₪ 81.17

₪ 3.247 Each (In a Pack of 25) (inc. VAT)

Microchip 2N7000 N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 2N7000-G
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
25 - 75₪ 2.775₪ 69.38
100+₪ 2.475₪ 61.88

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

60 V

Series

2N7000

Package Type

TO-92

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

30 V

Width

4.06mm

Number of Elements per Chip

1

Length

5.08mm

Maximum Operating Temperature

+150 °C

Height

5.33mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.85V

Country of Origin

Taiwan, Province Of China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more