IXYS Trench N-Channel MOSFET, 110 A, 250 V, 3-Pin TO-247 IXTH110N25T
Technical documents
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
250 V
Package Type
TO-247
Series
Trench
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
694 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
16.26mm
Typical Gate Charge @ Vgs
157 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
21.46mm
Product details
N-Channel Trench-Gate Power MOSFET, IXYS
Trench Gate MOSFET Technology
Low on-state Resistance RDS(on)
Superior avalanche ruggedness
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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₪ 1,583.10
₪ 52.77 Each (In a Tube of 30) (ex VAT)
₪ 1,852.23
₪ 61.741 Each (In a Tube of 30) (inc. VAT)
30
₪ 1,583.10
₪ 52.77 Each (In a Tube of 30) (ex VAT)
₪ 1,852.23
₪ 61.741 Each (In a Tube of 30) (inc. VAT)
30
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 120 | ₪ 52.77 | ₪ 1,583.10 |
| 150 - 270 | ₪ 48.225 | ₪ 1,446.75 |
| 300+ | ₪ 44.595 | ₪ 1,337.85 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
250 V
Package Type
TO-247
Series
Trench
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
694 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
16.26mm
Typical Gate Charge @ Vgs
157 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
21.46mm
Product details
N-Channel Trench-Gate Power MOSFET, IXYS
Trench Gate MOSFET Technology
Low on-state Resistance RDS(on)
Superior avalanche ruggedness
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products