Disruption To Air Freight Service

Due to the ongoing situation in the region air freight services are being restricted and thus delivery times are being affected. For further information please contact sales@rsisrael.co.il

IXYS HiperFET, Polar N-Channel MOSFET, 7 A, 800 V, 3-Pin TO-220 IXFP7N80P

RS Stock No.: 194-136Brand: IXYSManufacturers Part No.: IXFP7N80P
brand-logo
View all in MOSFETs

Technical documents

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

800 V

Package Type

TO-220

Series

HiperFET, Polar

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.44 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.66mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

32 nC @ 10 V

Width

4.83mm

Height

9.15mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Stock information temporarily unavailable.

₪ 178.95

₪ 35.79 Each (In a Pack of 5) (ex VAT)

₪ 209.37

₪ 41.874 Each (In a Pack of 5) (inc. VAT)

IXYS HiperFET, Polar N-Channel MOSFET, 7 A, 800 V, 3-Pin TO-220 IXFP7N80P
Select packaging type

₪ 178.95

₪ 35.79 Each (In a Pack of 5) (ex VAT)

₪ 209.37

₪ 41.874 Each (In a Pack of 5) (inc. VAT)

IXYS HiperFET, Polar N-Channel MOSFET, 7 A, 800 V, 3-Pin TO-220 IXFP7N80P
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
5 - 20₪ 35.79₪ 178.95
25 - 95₪ 28.17₪ 140.85
100 - 245₪ 27.045₪ 135.22
250 - 495₪ 23.40₪ 117.00
500+₪ 22.41₪ 112.05

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

800 V

Package Type

TO-220

Series

HiperFET, Polar

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.44 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.66mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

32 nC @ 10 V

Width

4.83mm

Height

9.15mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more