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P-Channel MOSFET, 16 A, 30 V, 8-Pin SOIC Infineon IRF9317PBF

RS Stock No.: 725-9243Brand: InfineonManufacturers Part No.: IRF9317PBF
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Technical documents

Specifications

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.99mm

Transistor Material

Si

Typical Gate Charge @ Vgs

31 nC @ 4.5 V, 61 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

4.98mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

1.57mm

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P.O.A.

P-Channel MOSFET, 16 A, 30 V, 8-Pin SOIC Infineon IRF9317PBF
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 10
1P.O.A.
11P.O.A.
21P.O.A.
31P.O.A.
41P.O.A.
51P.O.A.
61P.O.A.
71P.O.A.
81P.O.A.
91P.O.A.
101P.O.A.
111P.O.A.
121P.O.A.
131P.O.A.
141P.O.A.

P.O.A.

P-Channel MOSFET, 16 A, 30 V, 8-Pin SOIC Infineon IRF9317PBF
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 10
1P.O.A.
11P.O.A.
21P.O.A.
31P.O.A.
41P.O.A.
51P.O.A.
61P.O.A.
71P.O.A.
81P.O.A.
91P.O.A.
101P.O.A.
111P.O.A.
121P.O.A.
131P.O.A.
141P.O.A.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in

Technical documents

Specifications

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.99mm

Transistor Material

Si

Typical Gate Charge @ Vgs

31 nC @ 4.5 V, 61 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

4.98mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

1.57mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in