Infineon N-Channel MOSFET, 86 A, 60 V DirectFET ISOMETRIC IRF6648TRPBF

RS Stock No.: 130-0948PBrand: InfineonManufacturers Part No.: IRF6648TRPBF
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

86 A

Maximum Drain Source Voltage

60 V

Series

DirectFET, HEXFET

Package Type

DirectFET ISOMETRIC

Mounting Type

Surface Mount

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

89 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.05mm

Number of Elements per Chip

1

Length

6.35mm

Typical Gate Charge @ Vgs

36 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.5mm

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

1.3V

Product details

DirectFET® Power MOSFET, Infineon

The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.

Industry lowest on-resistance in their respective footprints
Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Stock information temporarily unavailable.

₪ 133.50

₪ 13.35 Each (Supplied on a Reel) (ex VAT)

₪ 156.20

₪ 15.62 Each (Supplied on a Reel) (inc. VAT)

Infineon N-Channel MOSFET, 86 A, 60 V DirectFET ISOMETRIC IRF6648TRPBF
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 2
10₪ 133.50
12₪ 160.20
14₪ 186.90
16₪ 213.60
18₪ 240.30
20₪ 267.00
22₪ 293.70
24₪ 320.40
26₪ 347.10
28₪ 373.80
30₪ 400.50
32₪ 427.20
34₪ 453.90
36₪ 480.60
38₪ 507.30

₪ 133.50

₪ 13.35 Each (Supplied on a Reel) (ex VAT)

₪ 156.20

₪ 15.62 Each (Supplied on a Reel) (inc. VAT)

Infineon N-Channel MOSFET, 86 A, 60 V DirectFET ISOMETRIC IRF6648TRPBF
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 2
10₪ 133.50
12₪ 160.20
14₪ 186.90
16₪ 213.60
18₪ 240.30
20₪ 267.00
22₪ 293.70
24₪ 320.40
26₪ 347.10
28₪ 373.80
30₪ 400.50
32₪ 427.20
34₪ 453.90
36₪ 480.60
38₪ 507.30

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Reel
10 - 98₪ 13.35₪ 26.70
100 - 498₪ 10.875₪ 21.75
500 - 998₪ 9.645₪ 19.29
1000+₪ 8.055₪ 16.11

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

86 A

Maximum Drain Source Voltage

60 V

Series

DirectFET, HEXFET

Package Type

DirectFET ISOMETRIC

Mounting Type

Surface Mount

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

89 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.05mm

Number of Elements per Chip

1

Length

6.35mm

Typical Gate Charge @ Vgs

36 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.5mm

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

1.3V

Product details

DirectFET® Power MOSFET, Infineon

The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.

Industry lowest on-resistance in their respective footprints
Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more