Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
137 A
Maximum Drain Source Voltage
60 V
Package Type
TDSON
Series
OptiMOS™ 5
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.3V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.35mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
6.1mm
Typical Gate Charge @ Vgs
37 nC @ 10 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
₪ 160.05
₪ 16.005 Each (In a Pack of 10) (ex VAT)
₪ 187.26
₪ 18.726 Each (In a Pack of 10) (inc. VAT)
Standard
10
₪ 160.05
₪ 16.005 Each (In a Pack of 10) (ex VAT)
₪ 187.26
₪ 18.726 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | ₪ 16.005 | ₪ 160.05 |
50 - 240 | ₪ 15.465 | ₪ 154.65 |
250 - 490 | ₪ 12.06 | ₪ 120.60 |
500 - 1240 | ₪ 11.415 | ₪ 114.15 |
1250+ | ₪ 9.285 | ₪ 92.85 |
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
137 A
Maximum Drain Source Voltage
60 V
Package Type
TDSON
Series
OptiMOS™ 5
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.3V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.35mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
6.1mm
Typical Gate Charge @ Vgs
37 nC @ 10 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.