Infineon N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON BSC010N04LSATMA1

RS Stock No.: 906-4381Brand: InfineonManufacturers Part No.: BSC010N04LSATMA1
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

40 V

Series

OptiMOS™ 5

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

139 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.1mm

Typical Gate Charge @ Vgs

95 nC @ 10V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Product details

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Stock information temporarily unavailable.

₪ 164.10

₪ 16.41 Each (In a Pack of 10) (ex VAT)

₪ 192.00

₪ 19.20 Each (In a Pack of 10) (inc. VAT)

Infineon N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON BSC010N04LSATMA1
Select packaging type

₪ 164.10

₪ 16.41 Each (In a Pack of 10) (ex VAT)

₪ 192.00

₪ 19.20 Each (In a Pack of 10) (inc. VAT)

Infineon N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON BSC010N04LSATMA1
Stock information temporarily unavailable.
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quantityUnit pricePer Pack
10 - 40₪ 16.41₪ 164.10
50 - 240₪ 11.07₪ 110.70
250 - 1240₪ 10.89₪ 108.90
1250 - 2490₪ 10.77₪ 107.70
2500+₪ 10.665₪ 106.65

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

40 V

Series

OptiMOS™ 5

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

139 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.1mm

Typical Gate Charge @ Vgs

95 nC @ 10V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Product details

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more