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Diodes Inc P-Channel MOSFET, 3.3 A, 20 V, 3-Pin SOT-23 DMG2305UX-7

RS Stock No.: 121-9640Brand: DiodesZetexManufacturers Part No.: DMG2305UX-7
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Technical documents

Specifications

Channel Type

P

Maximum Continuous Drain Current

3.3 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

1.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Width

1.4mm

Length

3mm

Typical Gate Charge @ Vgs

10.2 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.1mm

Country of Origin

China

Product details

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Stock information temporarily unavailable.

₪ 1,350.00

₪ 0.45 Each (On a Reel of 3000) (ex VAT)

₪ 1,579.50

₪ 0.526 Each (On a Reel of 3000) (inc. VAT)

Diodes Inc P-Channel MOSFET, 3.3 A, 20 V, 3-Pin SOT-23 DMG2305UX-7

₪ 1,350.00

₪ 0.45 Each (On a Reel of 3000) (ex VAT)

₪ 1,579.50

₪ 0.526 Each (On a Reel of 3000) (inc. VAT)

Diodes Inc P-Channel MOSFET, 3.3 A, 20 V, 3-Pin SOT-23 DMG2305UX-7
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Reel
3000 - 6000₪ 0.45₪ 1,350.00
9000+₪ 0.45₪ 1,350.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

P

Maximum Continuous Drain Current

3.3 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

1.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Width

1.4mm

Length

3mm

Typical Gate Charge @ Vgs

10.2 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.1mm

Country of Origin

China

Product details

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more