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Diodes Inc Dual N/P-Channel MOSFET, 2.1 A, 5.2 A, 20 V, 6-Pin TSOT-26 DMC2038LVT-7

RS Stock No.: 121-9597Brand: DiodesZetexManufacturers Part No.: DMC2038LVT-7
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Technical documents

Specifications

Channel Type

N, P

Maximum Continuous Drain Current

2.1 A, 5.2 A

Maximum Drain Source Voltage

20 V

Package Type

TSOT-26

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

56 mΩ, 168 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

2

Width

1.65mm

Length

2.95mm

Typical Gate Charge @ Vgs

12 nC @ 10 V, 14 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.9mm

Country of Origin

China

Product details

Dual N/P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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Stock information temporarily unavailable.

₪ 2,340.00

₪ 0.78 Each (On a Reel of 3000) (ex VAT)

₪ 2,737.80

₪ 0.913 Each (On a Reel of 3000) (inc. VAT)

Diodes Inc Dual N/P-Channel MOSFET, 2.1 A, 5.2 A, 20 V, 6-Pin TSOT-26 DMC2038LVT-7

₪ 2,340.00

₪ 0.78 Each (On a Reel of 3000) (ex VAT)

₪ 2,737.80

₪ 0.913 Each (On a Reel of 3000) (inc. VAT)

Diodes Inc Dual N/P-Channel MOSFET, 2.1 A, 5.2 A, 20 V, 6-Pin TSOT-26 DMC2038LVT-7
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N, P

Maximum Continuous Drain Current

2.1 A, 5.2 A

Maximum Drain Source Voltage

20 V

Package Type

TSOT-26

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

56 mΩ, 168 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

2

Width

1.65mm

Length

2.95mm

Typical Gate Charge @ Vgs

12 nC @ 10 V, 14 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.9mm

Country of Origin

China

Product details

Dual N/P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more