Wolfspeed SiC MOSFET, 1200 V CAB450M12XM3
Technical documents
Specifications
Brand
WolfspeedMaximum Drain Source Voltage
1200 V
Maximum Drain Source Resistance
4.6 mΩ
Maximum Gate Threshold Voltage
3.6V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
50 mW
Maximum Gate Source Voltage
-4 V, 19 V
Number of Elements per Chip
1
Width
53mm
Length
80mm
Typical Gate Charge @ Vgs
1330 nC @ 4/15V
Transistor Material
SiC
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-40 °C
Height
15.75mm
Country of Origin
United States
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P.O.A.
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Technical documents
Specifications
Brand
WolfspeedMaximum Drain Source Voltage
1200 V
Maximum Drain Source Resistance
4.6 mΩ
Maximum Gate Threshold Voltage
3.6V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
50 mW
Maximum Gate Source Voltage
-4 V, 19 V
Number of Elements per Chip
1
Width
53mm
Length
80mm
Typical Gate Charge @ Vgs
1330 nC @ 4/15V
Transistor Material
SiC
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-40 °C
Height
15.75mm
Country of Origin
United States
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products